Bildunterschrift
Figure 1: The thermoelectric figure of merit ZT as a function of carrier doping concentration of (a) Mg3PN, (b) Mg3AsN, (c) Mg3SbN, and (d) Mg3BiN at 300, 600, and 900 K
Ren_Wenling_Machine-learning Interatomic Potential for High Entropy Half Heusler Materials_Fig1
Ren_Wenling_Machine-learning Interatomic Potential for High Entropy Half Heusler Materials_Fig1
